JPH0464184B2 - - Google Patents

Info

Publication number
JPH0464184B2
JPH0464184B2 JP59084875A JP8487584A JPH0464184B2 JP H0464184 B2 JPH0464184 B2 JP H0464184B2 JP 59084875 A JP59084875 A JP 59084875A JP 8487584 A JP8487584 A JP 8487584A JP H0464184 B2 JPH0464184 B2 JP H0464184B2
Authority
JP
Japan
Prior art keywords
region
conductivity type
type
semiconductor
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59084875A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60226164A (ja
Inventor
Toshuki Ookoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP59084875A priority Critical patent/JPS60226164A/ja
Publication of JPS60226164A publication Critical patent/JPS60226164A/ja
Publication of JPH0464184B2 publication Critical patent/JPH0464184B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic
    • H10D84/655Integrated injection logic using field effect injector structures

Landscapes

  • Bipolar Integrated Circuits (AREA)
JP59084875A 1984-04-25 1984-04-25 半導体注入集積論理回路装置 Granted JPS60226164A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59084875A JPS60226164A (ja) 1984-04-25 1984-04-25 半導体注入集積論理回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59084875A JPS60226164A (ja) 1984-04-25 1984-04-25 半導体注入集積論理回路装置

Publications (2)

Publication Number Publication Date
JPS60226164A JPS60226164A (ja) 1985-11-11
JPH0464184B2 true JPH0464184B2 (en]) 1992-10-14

Family

ID=13842961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59084875A Granted JPS60226164A (ja) 1984-04-25 1984-04-25 半導体注入集積論理回路装置

Country Status (1)

Country Link
JP (1) JPS60226164A (en])

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5463683A (en) * 1977-10-31 1979-05-22 Hitachi Ltd Production of pn junction field effect transistor
JPS56118664A (en) * 1980-02-22 1981-09-17 Nishihara Environ Sanit Res Corp Density measuring device

Also Published As

Publication number Publication date
JPS60226164A (ja) 1985-11-11

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